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SMP100-XXX SMP100-XXXH225
TRISIL TM
FEATURES BIDIRECTIONAL CROWBAR PROTECTION VOLTAGE RANGE : FROM 8V to 320V REPETITIVE PEAK PULSE CURRENT: IPP = 100 A (10/1000 s) HOLDING CURRENT: IH = 150mA or 225mA LOW LEAKAGE CURRENT: IR = 2 A max DESCRIPTION The SMP100 series are transient surge arrestors used for the protection of sensitive telecom equipment. MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes : ANALOG AND DIGITAL LINE CARDS MAIN DISTRIBUTION FRAMES TERMINALS AND TRANSMISSION EQUIPMENT GAS-TUBE REPLACEMENT BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMP100 FALLS INTO SHORT CIRCUIT,STILLENSURINGPROTECTION BOARD SPACE SAVING COMPLIES WITH THE FOLLOWING STANDARDS: CCITT K20 VDE0433 VDE0878 IEC-1000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B BELLCORE TR-NWT-001089 First level BELLCORE TR-NWT-001089 Second level CNET l31-24
October 1998 - Ed : 7A
SMB (JEDEC DO-214AA) SCHEMATIC DIAGRAM
Peak Surge Voltage (V) 4000 4000 4000 level 4 level 4 1500 800 100 2500 1000 500 4000
Voltage Waveform (s) 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 5/320 2/10 10/1000 2/10 0.5/700
Current Waveform (s) 5/310 5/310 1/20 5/310 8/20 10/160 10/560 5/320 2/10 10/1000 2/10 0.8/310
Admissible Ipp (A) 100 100 100 100 100 200 100 25 500 100 500 100
Necessary Resistor () 1/9
SMP100-XXX / SMP100-XXXH225
THERMAL RESISTANCES Symbol Rth(j-I) Rth(j-a) Junction to leads Junction to ambient on printed circuit (with standard footprint dimensions) Parameter Value 20 100 Unit C/W C/W
ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol Ipp Parameter Peak pulse current: 10/1000 s (open circuit voltage waveform 1 kV 10/1000 s) 5/310s (open circuit voltage waveform 4 kV, 10/700s) 8/20 s (open circuit voltage waveform 4 kV 1.2/50 s) 2/10 s (open circuit voltage waveform 2.5kV 2/10 s) Fail-safe mode Non repetitive surge peak on-state current One cycle Non repetitive surge peak on-state current F = 50Hz TL Tstg Tj Maximum lead temperature for soldering during 10s Storage temperature range Maximum junction temperature 8/20 s 50Hz 60Hz 0.2s 2s Value 100 150 250 500 5 55 60 25 12 260 - 55 to + 150 150 Unit A A A A kA A A A A C C C
IFS ITSM
Note 1: Pulse waveform 10 / 1000 s 8 / 20 s 5 / 310 s 1 / 20 s 2 / 10 s tr = 10 s tr = 8 s tr = 5 s tr = 1 s tr = 2 s tp = 1000 s tp = 20 s tp = 310 s tp = 20 s tp = 10 s
% IPP
100 50 0 tr tp t
2/9
SMP100-XXX / SMP100-XXXH225
ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VR IR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Continuous reverse voltage Continuous reverse current Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance
STATIC PARAMETERS Type IRM @ VRM max. A SMP100-8 SMP100-35 SMP100-65 SMP100-120 SMP100-140 SMP100-200 SMP100-230 SMP100-270 SMP100-320 SMP100-120H225 SMP100-140H225 SMP100-200H225 SMP100-230H225 SMP100-270H225 2 2 2 2 2 2 2 2 2 2 2 2 2 2 V 6 32 55 110 120 170 200 230 270 110 120 170 200 230 IR @ VR max. note 1 A 50 50 50 50 50 50 50 50 50 50 50 50 50 50 V 8 35 65 120 140 200 230 270 320 120 140 200 230 270 VBO @ IBO max. note 2 V 20 55 80 160 200 265 300 350 470 160 200 265 300 350 mA 800 800 800 800 800 800 800 800 800 800 800 800 800 800 IH min. note 3 mA 50(typ) 150 150 150 150 150 150 150 150 225 225 225 225 225 C typ. note 4 pF 100 90 160 140 140 130 120 120 120 140 140 130 130 120
Note 1 : IR measured at VR guarantees VBR>VR Note 2 : Measured at 50Hz, see test circuit 1. In any case VBOmin VBR Note 3 : See functional holding current test circuit 2. Note 4 : VR=1V bias, VRMS=1V, F=1MHz.
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SMP100-XXX / SMP100-XXXH225
DYNAMIC PARAMETERS Symbol Test conditions (see note 5) Type SMP100-8 SMP100-35 SMP100-65 SMP100-120 SMP100-140 Test conditions 1 dV/dt = 100 V/s, di/dt < 10 A/s, IPP = 100 A VBO Test conditions 2 dV/dt = 1 kV/s, di/dt < 10 A/s, IPP = 10 A SMP100-200 SMP100-230 SMP100-270 SMP100-320 SMP100-120H225 SMP100-140H225 SMP100-200H225 SMP100-230H225 SMP100-270H225
Note 5 : VBO parameters are given by a KeyTek 'System 2' generator with PN246I module. See test circuits 3 for V BO dynamic parameters.
Max. 25 55 95 200 220 285 320 370 470 200 220 285 320 370
Unit
V
TEST CIRCUIT 1 FOR IBO and VBO parameters:
tp = 20ms
Auto Transformer 220V/2A
static relay. K
R1
140
R2
240
220V
Vout IBO measure
Transformer 220V/800V 5A
D.U.T
V BO measure
TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 .
4/9
SMP100-XXX / SMP100-XXXH225
TEST CIRCUIT 2 for IH parameter.
R D.U.T. VBAT = - 48 V Surge generator
- VP
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 s. - The D.U.T. will come back to the off-state within 50 ms max.
TEST CIRCUITS 3 FOR VBO DYNAMIC PARAMETERS
100 V / s, di/dt < 10 A / s, Ipp = 100 A
2
45 66 470
83 0.36 nF
46 H
U
10 F
KeyTek 'System 2' generator with PN246I module
1 kV / s, di/dt < 10 A / s, Ipp = 10 A
26 H
250 12
47
46 H
U
60 F
KeyTek 'System 2' generator with PN246I module
5/9
SMP100-XXX / SMP100-XXXH225
TYPICAL APPLICATIONS 1 - Primary protection module
3 * SMP100
Line Card
MDF
2 - Line card protection
- Vbat
PTC
R
LINE A
RING RELAY
220 nF
Integrated SLIC
LINE B
PTC R
3 * SMP100
LCP1511D
3 - ISDN: U interface protection
PTC
3 * SMP100
1/2 DA108S1
R3 + 5V
R4
R6
Internal circuitry
R5 PTC
Feeder
6/9
SMP100-XXX / SMP100-XXXH225
Fig 1 : Non repetitive surge peak on-state current versus overload duration (Tj initial = 25 C). Fig 2 : On-state voltage versus on-state current (typical values).
ITSM(A) 70 60 50 40 30 20 10 0 1E-2 1E-1 t(s) 1E+0 1E+1 1E+2 1E+3
F=50Hz
I T (A) 50
Tj=25C
10
VT (V) 1 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
Fig 3 : Relative variation of holding current versus junction temperature.
Fig 4 : Variation of thermal impedance junction to ambient versus pulse duration.
IH[Tj] / IH[Tj=25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20
Zth(j-a)(CW) 100
10
Tj(C) 40 60 80 100 120
tp(s) 1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig 5 : Relative variation of junction capacitance versus reverse voltage applied (typical values).
Note : For other types than SMP100-8, the curve can be extrapolated (dotted line)
C[VR]/C[VR=1V] 1.0
F=1MHz
0.5
0.2
VR (V)
0.1 1 10 100 500
7/9
SMP100-XXX / SMP100-XXXH225
MARKING Package SMB Type SMP100-8 SMP100-35 SMP100-65 SMP100-120 SMP100-140 SMP100-200 SMP100-230 SMP100-270 SMP100-320 SMP100-120H225 SMP100-140H225 SMP100-200H225 SMP100-230H225 SMP100-270H225 Marking PL8 P35 P06 P12 P14 P20 P23 P27 P32 P13 P16 P22 P24 P29
ORDER CODE
SMP 100 - 270 H225
SURFACE MOUNT PROTECTION
IPP = 100A
VOLTAGE
H225 : IH = 225 mA : IH = 150mA
8/9
SMP100-XXX / SMP100-XXXH225
PACKAGE MECHANICAL DATA SMB (Plastic) DIMENSIONS
E1
REF.
D
Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75
Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063
A1 A2 b
E
c
A1
E E1 D
C L
A2
b
L
FOOT PRINT (in millimeters)
Packaging : tape and reel Weight : 0.107g
2.3
1.52
2.75
1.52
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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